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| RFP12P08, RFP12P10 Data Sheet June 1999 File Number 1495.2 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511. Features * 12A, 80V and 100V * rDS(ON) = 0.300 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP12P08 RFP12P10 PACKAGE TO-220AB TO-220AB BRAND RFP12P08 RFP12P10 Symbol D NOTE: When ordering, include the entire part number. G S Packaging TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 4-161 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999. RFP12P08, RFP12P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12P08 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 12 30 20 75 0.6 -55 to 150 300 260 12 30 20 75 0.6 -55 to 150 300 260 A A V W W/oC oC oC oC RFP12P10 -100 -100 UNITS V V -80 -80 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0 -80 -100 VGS(TH) IDSS VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC -2 VGS = 0V, VDS = -25V, f = 1MHz (Figure 9) RFP12P08, RFP12P10 18 90 144 94 -4 1 25 100 -3.6 0.300 60 175 275 175 1500 700 300 1.67 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP12P08 RFP12P10 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0 ID = 12A, VGS = -10V ID = 12A, VGS = -10V, (Figures 6, 7) ID 12A, VDD = 50V, RG = 50, RL = 4.1, VGS = -10V (Figure 10) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width = 300s Max, Duty Cycle 2% 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = -12A ISD = -12A, dISD/dt = 100A/s MIN TYP 200 MAX 1.4 UNITS V ns 4-162 RFP12P08, RFP12P10 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 50 100 150 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 0.8 0.6 0.4 0.2 0 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 OPERATION IN THIS AREA LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID MAX CONTINUOUS 10 DC TC = 25oC TJ = MAX RATED ID, DRAIN CURRENT (A) 40 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -20V 30 VGS = -10V VGS = -9V VGS = -8V VGS = -7V VGS = -6V 20 1 RFP12P08 RFP12P10 0.1 10 VGS = -3V 0 VGS = -5V VGS = -4V -10 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 0 -2 -4 -6 -8 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 20 VDS = -10V PULSE DURATION = 80s 16 DUTY CYCLE = 0.5% MAX -40oC 25oC DRAIN TO SOURCE ON RESISTANCE () 0.4 VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.3 125oC 125oC 12 0.2 25oC -40oC 8 4 125oC -40oC 0 0 -2 -3 -5 -4 -6 VGS, GATE TO SOURCE VOLTAGE (V) -7 -8 0.1 0 0 2 4 8 12 6 10 14 ID, DRAIN CURRENT (A) 16 18 20 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-163 RFP12P08, RFP12P10 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 12A, VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.5 NORMALIZED GATE THRESHOLD VOLTAGE (Continued) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ID = 250A VDS = VGS 1.0 0.5 0 -50 0 50 100 150 0.6 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2400 2000 C, CAPACITANCE (PF) 1600 1200 800 COSS 400 CRSS 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 VDD = BVDSS 75 VDD = BVDSS GATE SOURCE VOLTAGE RL = 8.3 IG(REF) = 0.92mA VGS = -10V VGS, GATE TO SOURCE VOLTAGE (V) 8 6 50 25 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 4 2 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4-164 RFP12P08, RFP12P10 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-165 |
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